Abstract :
In this paper presents small angle ion scattering of noble gases from the III V compound semiconductor surfaces have been studied by the method of computer simulation. The effect ion focusing and refocusing was studied. The coefficient of scattering ions has been calculated. Karimov Muxtor Karimberganovich | Sadullaev Shuxrat Ravshanovich | Sobirov Ravshanbek Yuldashbaevich "Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-5 , August 2018, URL: https://www.ijtsrd.com/papers/ijtsrd15772.pdf Paper URL: http://www.ijtsrd.com/physics/other/15772/effect-of-ion-refocusing-and-focusing-at-the-ne-and-ar-small-angle-ion-bombardment-on-the-surface-iii-v-compound-semiconductors/karimov-muxtor-karimberganovich
Keyword :
ion focusing; ion refocusing; computer simulation; ion scattering; semi channels