Materials Physics and Chemistry


Online-Issn No :
2661-412X
Print-Issn No :
XXXX
Language :
English
Publisher :
PiscoMed Publishing

Indexed - 2019 : IPI Value (2.06)

Indexed - 2020 : IPI Value (2.06)

Indexed - 2021 : IPI Value (2.52)


The influence of the metal microstructure on the breakdown mechanism of Schottky diodes


Article PDF :

Veiw Full Text PDF

Article type :

Original article

Author :

Sh.G. Askerov, M.G. Gasanov,L. KAbdullayeva

Volume :

1

Issue :

1

Abstract :

In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semiconductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a polycrystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.

Keyword :

Schottky diode, Metal-semiconductor contact, Interface, Barrier height, Breakdown voltage

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