The influence of the metal microstructure on the breakdown mechanism of Schottky diodes


Article PDF :

Veiw Full Text PDF

Article type :

Original article

Author :

Sh.G. Askerov, M.G. Gasanov,L. KAbdullayeva

Volume :

1

Issue :

1

Abstract :

In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semiconductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a polycrystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.

Keyword :

Schottky diode, Metal-semiconductor contact, Interface, Barrier height, Breakdown voltage
Journals Insights Open Access Journal Filmy Knowledge Hanuman Devotee Avtarit Wiki In Hindi Multiple Choice GK