International Journal of Trend in Scientific Research and Development


Online-Issn No :
2456-6470
Print-Issn No :
XXXX
Language :
English
Publisher :
R Patel

Indexed - 2019 : IPI Value (4.22)


On the low temperature resistivity measurement of CdSe thin film


Article PDF :

Veiw Full Text PDF

Article type :

Original Article

Author :

R.K.Shah | H.O.Parmar | H.S.Patel

Volume :

1

Issue :

2

Abstract :

Most group II-VI compounds are direct band gap semiconductors with high optical absorption and emission coefficients .Cadmium Selenide is a leading candidate with high potential towards many applications. The authors present their investigations dealing with preparation and some electrical characterization of the CdSe thin films. The films were deposited onto a well-cleaned glass substrates using thermal evaporation technique. The dependence of electrical resistivity of CdSe thin film in low temperature range has been studied. by R.K.Shah | H.O.Parmar | H.S.Patel"On the low temperature resistivity measurement of CdSe thin film" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-1 | Issue-2 , February 2017, URL: http://www.ijtsrd.com/papers/ijtsrd65.pdf Paper URL: http://www.ijtsrd.com/other-scientific-research-area/physics/65/on--the-low-temperature-resistivity-measurement-of-cdse-thin-film/rkshah

Keyword :

Cadmium Selenide, thermal evaporation technique, thin film, electrical resistivity

Doi :

https://doi.org/10.31142/ijtsrd65

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